STL4N80K5 datasheet(3/17 Pages) STMICROELECTRONICS

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DocID025574 Rev 2

3/17

STL4N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

(1)

The value is limited by package.

Drain current (continuous) at TC = 25 °C

2.5

(1)

Drain current (continuous) at TC = 100 °C

1.55

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

74.5

dv/dt (3)

ISD ≤ 2.5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

VDS ≤ 640 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Operating junction temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

3.3

°C/W

Rthj-amb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-amb max

°C/W

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