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STL33N60M2 Datasheet(PDF) 7 Page - STMicroelectronics |
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STL33N60M2 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() STL33N60M2 Electrical characteristics DocID024325 Rev 3 7/15 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Output capacitance stored energy GIPG230420141135MT GIPG230420141136MT GIPG090720140955MT RDS(on) 1.9 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 VGS=10V 2.3 GIPG090720141001MT V(BR)DSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.91 0.93 0.99 1.03 ID=1m A 1.07 1.11 0.95 0.97 1.01 1.05 1.09 VSD 0 4 ISD(A) (V) 2 10 6 8 0 0.2 0.4 0.6 TJ=-50°C TJ=150°C TJ=25°C 0.8 1 1.2 1.4 16 18 20 14 12 GIPG090720141014MT GIPG230420141137MT |
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