STL33N60M2 datasheet(3/15 Pages) STMICROELECTRONICS

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STL33N60M2

Electrical ratings

DocID024325 Rev 3

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

(1)

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

13.8

IDM

(2)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

150

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

1100

dv/dt

(3)

Peak diode recovery voltage slope

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Operating junction temperature

150

°C

Notes:

(1)

The value is limited by package.

(2)

Pulse width limited by safe operating area.

(3)

ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V.

(4)

VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.83

°C/W

Rthj-amb

(1)

Thermal resistance junction-ambient max

°C/W

Notes:

(1)

When mounted on FR-4 board of inch², 2oz Cu.

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