STP27N60M2-EP datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STP27N60M2-EP, STW27N60M2-EP

4/16

DocID028723 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 10 A

0.150

0.163

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

1320

Coss

Output capacitance

Crss

Reverse transfer

capacitance

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

146

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

Ω

Total gate charge

VDD = 480 V, ID = 20 A,

VGS = 10 V (see Figure 17:

"Test circuit for gate charge

behavior")

Qgs

Gate-source charge

5.2

Qgd

Gate-drain charge

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 10 A,

RG = 4.7

Ω, VGS = 10 V (see

Figure 16: "Test circuit for

resistive load switching times"

and Figure 21: "Switching time

waveform" )

13.4

Rise time

8.1

td(off)

Turn-off-delay time

55.6

Fall time

6.3

STP27N60M2-EP Datasheet(PDF) 4 Page - STMicroelectronics

STP27N60M2-EP Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL