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STP27N60M2-EP Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP27N60M2-EP
Description  Very low turn-off switching losses
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP27N60M2-EP Datasheet(HTML) 5 Page - STMicroelectronics

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STP27N60M2-EP, STW27N60M2-EP
Electrical characteristics
DocID028723 Rev 1
5/16
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
20
A
ISDM(1)
Source-drain current
(pulsed)
-
80
A
VSD (2)
Forward on voltage
VGS = 0 V, ISD = 20 A
-
1.6
V
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 21:
"Switching time waveform")
-
271
ns
Qrr
Reverse recovery charge
-
3.44
µC
IRRM
Reverse recovery current
-
25.4
A
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 21: "Switching time
waveform")
-
352
ns
Qrr
Reverse recovery charge
-
4.82
µC
IRRM
Reverse recovery current
-
27.4
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%



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