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UT8SF2M32MCPC Datasheet(PDF) 6 Page - Aeroflex Circuit Technology |
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UT8SF2M32MCPC Datasheet(HTML) 6 Page - Aeroflex Circuit Technology |
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6 / 27 page ![]() 6 36-00-01-006 Ver. 1.9.4 Aeroflex Microelectronics Solutions - HiRel DEVICE OPERATION The UT8SF2M32 is synchronous flow-thru SSRAM designed specifically to eliminate wait states during Write/Read or Read/ Write transitions. All synchronous inputs are registered on the rising edge of clock. The clock signal is enabled by the Clock Enable input (CEN). When CEN is HIGH, the clock signal is disregarded and all internal states are maintained. All synchronous operations are qualified by CEN. Once power-up requirements have been satisfied, the input clock may only be stopped during sleep (ZZ is HIGH) or shutdown mode (SHUTDOWN is HIGH). Maximum access delay from the rising edge of clock (tCQV) is 11.5ns (80MHz device). Access is initiated by asserting all three Chip Enables (CS0, CS1, CS2) active at the rising edge of the clock with Clock Enable (CEN) and ADV_LD asserted LOW. The address presented to the device will be registered. Access can be either a Read or Write operation, depending on the status of the Write Enable (WE). Write operations are initiated by the Write Enable (WE) input. All write commands are controlled by built in synchronous self-timed circuitry. Three synchronous Chip Enables (CS0, CS1, CS2) and an asynchronous Output Enable (OE) simplify memory depth expansion. All operations (Reads, Writes, and Deselects) are registered. ADV_LD must be driven LOW once the device has been deselected in order to load a new address and command for the next operation. Single Read Accesses A read access is initiated when the following device inputs are present at rising clock edge: CEN is enabled LOW, CS0, CS1, and CS2 are all enabled, the Write Enable input signal WE is disabled HIGH and ADV_LD is asserted LOW. The addresses present at the address inputs A[20:0] are registered and presented to the memory. Data is available to the bus within 12ns provided OE is enabled LOW. After the first clock of the read access, the output buffers are controlled by OE and the internal control logic. OE must be enabled LOW to drive requested data. During the next rising clock, any operation (Read/Write/Deselect) may be initiated. Burst Read Accesses The UT8SF2M32 has an internal burst counter allowing up to four reads to be performed from a single address input. A new address can only be loaded when ADV_LD is driven LOW. New addresses are loaded into the SSRAM, as described by the Single Read Access section. The burst counter operates in either linear or interleave and is controlled by the MODE input at power up. When MODE pin is LOW, the burst sequence is linear. The burst sequence is interleaved when MODE is HIGH. A0 and A1 are controlled by the burst counter. Burst counter will wrap around when needed. The burst counter increments anytime ADV_LD is HIGH and CEN is LOW. The operation selected by the state of WE is latched at the beginning of the sequence and maintained throughout. Read Access Error Detection and Correction The UT8SF2M32 device features an embedded single error correction double error detection (SECDED) Aeroflex proprietary error correction scheme. Single bit errors are corrected during read accesses. Data corrections, to the core memory, occurs during a separate data scrubbing activities. Double bit errors are detected and indicated by MBE0, MBE1 and MBEC. The MBE0 output is the multibit error indictor for the 16 even DQs. The MBE1 output is the multibit error indicator for 16 odd DQs. MBEC is the combined ORed result of MBE0 and MBE1. Either MBEC or MBE0 and MBE1 can be monitored to validate data. If all MBEx signals (MBEC, MBE0, MBE1) remain LOW during a data output cycle, the data is valid. If any of the MBE signal pins go active HIGH during a read activity, the data is invalid and contains an uncorrectable multibit error. Aeroflex recommends that all DQ pins be connected to either VDDQ or VSSQ through pull up/ down resistors as DQ[51:0] must not be left floating. The upper 20 I/O pins DQ[51:32] are used for error code data storage, and need to be individually connected to soft pull ups or downs (refer to Table 4 external connections). When the EDAC is enabled via the EDACEN pin, the upper 20 data I/Os are ignored during write operations and tri-stated during read operations. When the EDAC is disabled, the upper 20 data I/ Os may be written and read the same as DQ[31:0]. Single Write Accesses A write access is initiated when the following device inputs are present at rising clock edge: CEN is enabled LOW, CS0, CS1, and CS2 are all enabled, the Write Enable input signal WE, ADV_LD, and FLSH_PIPE are asserted LOW. The addresses present at the address inputs A[20:0] are registered and presented to the memory core. Data I/Os are tri-stated after tCQZ is satisfied regardless of the state of OE. During a write operation, data is qualified by the FLSH_ PIPE input. Input data at DQ[51:0] is registered when FLSH_PIPE is LOW in conjunction with an active WE, but ignored when FLSH_PIPE is HIGH with an active WE. In either state of FLSH_PIPE, commands are shifted through the register pipeline. |
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