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DMN4800LSSQ Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMN4800LSSQ Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 6 page ![]() DMN4800LSSQ Document number: DS37496 Rev. 1 - 2 3 of 6 www.diodes.com March 2016 © Diodes Incorporated DMN4800LSSQ 0 0.5 1 1.5 2 0 5 10 15 20 30 25 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V) DS V = 2.0V GS V = 3.0V GS V = 4.5V GS V = 10V GS V = 2.5V GS 0 5 10 15 20 25 30 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 5V DS 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A) D V = 4.5V GS V = 2.5V GS 0 0.01 0.02 0.03 0 5 10 15 20 25 30 I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 4.5V GS Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A 0.6 0.8 1.0 1.2 1.4 1.8 1.6 V = 4.5V I = 10A GS D V = 10V I = 11.6A GS D 0 0.005 0.01 0.015 0.02 0.025 0.03 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A V = 10V I = 11.6A GS D V = 4.5V I = 10A GS D |
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