DMN2041L

Document number: DS31962 Rev. 2 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMN2041L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 5)

Steady

State

6.4

4.5

A

Pulsed Drain Current (Note 6)

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

0.78

W

161

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

—

—

V

—

—

1.0

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

—

1.2

V

Static Drain-Source On-Resistance

—

20

26

28

41

mΩ

Forward Transfer Admittance

—

6

—

S

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

550

—

pF

f = 1.0MHz

Output Capacitance

—

88

—

Reverse Transfer Capacitance

—

81

—

Gate Resistance

—

1.34

—

Ω

Total Gate Charge (10V)

—

15.6

—

nC

Total Gate Charge (4.5V)

—

7.2

—

nC

Gate-Source Charge

—

1.0

—

Gate-Drain Charge

—

1.9

—

Turn-On Delay Time

—

4.69

—

ns

Turn-On Rise Time

—

13.19

—

Turn-Off Delay Time

—

22.10

—

Turn-Off Fall Time

—

6.43

—

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.