DMN2041L

Document number: DS31962 Rev. 2 - 2

4 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMN2041L

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25

0

25

50

75

100 125 150

T , AMBIENT TEMPERATURE (°C)

A

I = 1mA

D

I = 250µA

D

0

4

8

12

16

20

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

T = 25°C

A

0

5

10

15

20

Fig. 9 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

10

100

1,000

f = 1MHz

2

4

6

8

10

12

14

16

18

20

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

JA

12



R

(t) = r(t) *

JA

R

R

= 160°C/W





JA

JA

P(pk)

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5