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RF5111 Datasheet(PDF) 8 Page - RF Micro Devices |
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RF5111 Datasheet(HTML) 8 Page - RF Micro Devices |
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8 / 14 page ![]() 8 of 14 RF5111 Rev A1 DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic Notes: 1. Using a hi-Q capacitor will increase efficiency slightly. 2. All capacitors are standard 0402 multi layer chip. RF IN V CC V CC 5.1 pF Note 1 50 Ω μstrip 1.0 pF Note 1 33 pF RF OUT Quarter wave length 15 pF V CC 1.0 pF 1 nF 12 pF Very close to pin 15/16 V CC APC 15 pF 15 pF Distance center to center of capacitors 0.220" Instead of a stripline, an inductor of ~6 nH can be used Distance between edge of device and capacitor is 0.080" Instead of a stripline, an inductor of 2.2 nH can be used 15 pF 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 33 pF 15 pF Distance between edge of device and capacitor is 0.240" to improve the "off" isolation |
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