STP2301 datasheet(3/6 Pages) DGNJDZ

3 / 6 page

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Static Parameters

V(BR)DSS

Drain-Source Breakdown Voltage VGS=0V,ID=-250 A

-20

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=-250 A

-0.5

-1.2

IGSS

Gate Leakage Current

VDS=0V,VGS=±12V

±100

VDS=-20V,VGS=0V, TJ=25°C

-1

IDSS

Zero Gate Voltage Drain Current

VDS=-20V,VGS=0V, TJ=55°C

-5

RDS(ON)

Drain-source On-Resistance

VGS=-4.5V,ID=-3.0A

VGS=-2.5V,ID=-2.0A

110

130

Gfs

Forward Transconductance

VDS=-5V,ID=-3.0A

7.5

Source-Drain Doide

VSD

Diode Forward Voltage

IS=-1.0A,VGS=0V

-0.7

-1.2

Continuous Source Current

-6

Dynamic Parameters

Total Gate Charge

9.4

Qgs

Gate-Source Charge

1.2

Qgd

Gate-Drain Charge

VDS=-12V

VGS=-4.5V

ID -3.0A

3.5

Ciss

Input Capacitance

521

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS=-10V

VGS=0V

f=1MHz

td(on)

7.2

Turn-On Time

td(off)

Turn-Off Time

VDD=-12V

ID=-1A

VGEN=-4.5V

RG=3.3

Note:

A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment

with TA=25 C.

B. The data tested by pulsed , pulse width

300uS , duty cycle

C. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH.

D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

STP2301 Datasheet(PDF) 3 Page - Nanjing International Group Co

STP2301 Datasheet(HTML) 3 Page - Nanjing International Group Co

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL