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CT3401A-R3 Datasheet(PDF) 4 Page - CT Micro International Corporation

Part # CT3401A-R3
Description  P-Channel Enhancement MOSFET
PDF  11 Pages
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Manufacturer  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CT3401A-R3 Datasheet(HTML) 4 Page - CT Micro International Corporation

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CT Micro
Rev 2
Proprietary & Confidential
Page 4
Aug, 2015
CT3401A-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
VSD
Body Diode Forward Voltage
VGS = 0V, ISD = -1.0A
1.2
V
ISD
Body Diode Continuous Current
-4.2
A
1
Note:
1.The power dissipation is limited by 150
℃junction temperature.
2.Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Test Board
3.The data tested by pulsed , pulse width
≦ 300μs , duty cycle ≦ 2%
4.Thermal Resistance follow JESD51-3.



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