CT3401A-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 2

Proprietary & Confidential

Page 3

Aug, 2015

CT3401A-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= - 0.25µA

-30

IDSS

Drain-Source Leakage Current

VDS = -30V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±12V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -10V, ID = -4.2A

Ω

VGS = -4.5V, ID = -4.0A

VGS = -2.5V, ID = -1.0A

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID = -250µA

-0.47

-1.3

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = - 10V ,

VGS = 0V,

f=1MHz

1320

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -15V , VGS = - 10V,

RG = 3 ,

ID = -4.2A

10.7

Rise Time

11.2

TD(OFF)

Turn-Off Delay Time

47.1

Fall Time

6.7

Total Gate Charge

VDS = -4.5V , VGS = -105,

ID = -4.2A

12.4

QGS

Gate-Source Charge

2.9

QGD

Gate-Drain (Miller) Charge

3.5

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