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AS7C34098 Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS7C34098
Description  5V/3.3V 256K x 16 CMOS SRAM
PDF  10 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C34098 Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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AS7C4098
AS7C34098
1/13/05; v.1.9
Alliance Semiconductor
P. 7 of 10
Write waveform 3 10,11
AC test conditions
Notes
1During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A, B, C.
4tCLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.
5
This parameter is guaranteed, but not tested.
6WE is High for read cycle.
7CE and OE are Low for read cycle.
8
Address valid prior to or coincident with CE transition Low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C = 30pF, except on High Z and Low Z parameters, where C = 5pF.
Address
CE
LB, UB
WE
DataIN
tWC
tCW
tBW
tWP
tDW
tDH
tWZ
tAH
DataOUT
Data undefined
High Z
High Z
tAS
tAW
Data valid
tWR
- Output load: see Figure B or Figure C.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
10%
90%
10%
90%
GND
+3.0V
2 ns
Figure A: Input pulse
255
C13
480
DOUT
GND
+5V
Figure B: 5V Output load
350
C13
320
DOUT
GND
+3.3V
Figure C: 3.3V Output load
168
Thevenin equivalent: D
OUT
+1.728V (5V and 3.3V)



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