DMN3067LW

Document number: DS36640 Rev. 4 - 2

4 of 6

www.diodes.com

March 2014

© Diodes Incorporated

DMN3067LW

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

-50

-25

0

25

50

75

100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J



V

= 4.0V

I= 2.0A

GS

D

V=

V

I= 1.0A

GS

D

2.5

0.4

0.6

0.8

1

1.2

1.4

1.6

-50-25

0

25

50

75100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J



I= 1mA

D

I = 250µA

D

0

1

2

3

4

5

6

7

8

9

10

0

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T= -55°C

A

T= 25°C

A

T= 85°C

A

T = 125°C

A

T = 150°C

A

10

100

1000

0

5

10

15

20

25

30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

f = 1MHz

0

2

4

6

8

10

02

468

10

12

Q(nC)

Figure 11 Gate Charge

V

= 15V

I=

A

DS

D

2.5

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

0.001

0.01

0.1

1

10

100

0.1

1

10

100

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T

= 150°C

T = +25°C

J(max)

A

V

= 4.5V

Single Pulse

GS

DUT on 1 * MRP Board