DMN7022LFG datasheet(2/6 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated.

DMN7022LFG

Document number: DS37008 Rev. 1 - 2

2 of 6

www.diodes.com

July 2014

DMN7022LFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

7.8

6.2

t<10s

TA = +25°C

TA = +70°C

10.5

8.4

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

2.1

Avalanche Current, L = 0.1mH

IAS

28.8

Avalanche Energy, L = 0.1mH

EAS

42.2

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

125

°C/W

t<10s

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

6.9

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 75V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

14.6

mΩ

VGS = 10V, ID = 7.2A

—

20.5

VGS = 4.5V, ID = 6.4A

Diode Forward Voltage

VSD

—

0.72

—

VGS = 0V, IS = 3.2A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2737

—

VDS = 35V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

126

—

Reverse Transfer Capacitance

Crss

—

96.1

—

Gate Resistance

—

0.89

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

26.4

—

VDS = 38V, ID = 7.2A

Total Gate Charge (VGS = 10V)

—

56.5

—

Gate-Source Charge

Qgs

—

Gate-Drain Charge

Qgd

—

11.8

—

Turn-On Delay Time

tD(on)

—

6.1

—

VGS = 10V, VDS = 38V,

RG = 1Ω, ID = 5.7A

Turn-On Rise Time

—

5.7

—

Turn-Off Delay Time

tD(off)

—

19.6

—

Turn-Off Fall Time

—

3.9

—

Body Diode Reverse Recovery Time

trr

—

26.2

—

IF = 5.7A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

—

25.2

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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