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DMN7022LFG

Document number: DS37008 Rev. 1 - 2

4 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMN7022LFG

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

-50

-25

0

25

50

75

100

125 150

V

= 4.5V

I= 6.4A

GS

D

V=

V

I= 7.2A

GS

D

10

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-50

-25

0

25

50

75

100

125 150

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

0

3

6

9

12

15

18

21

24

27

30

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1

1.1 1.2

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

10

100

1000

10000

0

5

10

15

20

25

30

35

40

f = 1MHz

Q(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

0

6

12

18 24

30

36 42

48 54

60

V

= 38V

I=

A

DS

D

7.2

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.001

0.01

0.1

1

10

100

0.1

1

10

100

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

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