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DMN2011UFX Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN2011UFX Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMN2011UFX Document number: DS37250 Rev. 3 - 2 2 of 7 www.diodes.com August 2015 © Diodes Incorporated DMN2011UFX Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 12.2 9.8 A Continuous Drain Current (Note 6) VGS = 2.5V Steady State TA = +25°C TA = +70°C ID 10.4 8.3 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 80 A Maximum Body Diode Continuous Current IS 2.5 A Avalanche Current (Note 7) L = 0.1mH IAS 18 A Repetitive Avalanche Energy (Note 7) L = 0.1mH EAS 17 mJ Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 6) PD 2.1 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RJA 59.1 °C/W Thermal Resistance, Junction to Case (Note 6) RJC 7.1 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS 1 µA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ±10 µA VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 0.3 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) 9.5 m Ω VGS = 4.5V, ID = 10A 10 VGS = 4.0V, ID = 10A 10.5 VGS = 3.5V, ID = 9A 11.5 VGS = 3.1V, ID = 9A 13 VGS = 2.5V, ID = 8A Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 2,248 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 295 pF Reverse Transfer Capacitance Crss 265 pF Gate Resistance Rg 1.5 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg 24 nC VDS = 10V, ID = 8.5A Total Gate Charge (VGS = 10V) Qg 56 nC Gate-Source Charge Qgs 3.5 nC Gate-Drain Charge Qgd 5.1 nC Turn-On Delay Time tD(on) 3.6 ns VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8Ω Turn-On Rise Time tr 2.6 ns Turn-Off Delay Time tD(off) 21.6 ns Turn-Off Fall Time tf 13.5 ns Body Diode Reverse Recovery Time trr 12.8 nS IF = 8.5A, dI/dt = 210A/μs Body Diode Reverse Recovery Charge Qrr 6.9 nC IF = 8.5A, dI/dt = 210A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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