DMN2011UFX

Document number: DS37250 Rev. 3 - 2

4 of 7

www.diodes.com

August 2015

© Diodes Incorporated

DMN2011UFX

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J



0

0.2

0.4

0.6

0.8

1

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

0.1

1

10

100

1000

10000

100000

0

2

4

6

8

10

12

14

16

18

20

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

100

1000

10000

0

2

4

6

8

10

12

14

16

18

20

C

oss

f = 1MHz

Q

(nC)

Figure 11 Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

10

20

30

40

50

60

V

= 10V

I =

A

DS

D

8.5

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

0.01

0.1

1

10

100

T

= 150°C

T = 25°C

V

= 4.5V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W