DMN2019UTS datasheet(4/6 Pages) DIODES

4 / 6 page

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

4 of 6

www.diodes.com

December 2012

DMN2019UTS

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25

100 125 150

T , AMBIENT TEMPERATURE (°C)

I = 1mA

I = 250µA

0.2

0.4

0.6

0.8

1.2

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

T = 25°C

Fig. 9 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

100

1,000

Ciss

Crss

Coss

f = 1MHz

0.01

0.1

100

0.1

100

Limited

DS(on)

Fig. 10 Safe Operation Area

-DS

V , DRAIN-SOURCE VOLTAGE (V)

= 150°C

T = 25°C

Single Pulse

J(m ax)

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

P = 10 s

0.00001

0.0001

0.001

0.01

0.1

100

1,000

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)

T - T = P * R

(t)

Duty Cycle, D = t /t

(t) = r(t) *

θJA

= 157°C/W

P(pk)

0.001

0.01

0.1

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

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