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MMBR920L Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MMBR920L Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN RF Transistor MMBR920L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 50 nA hFE DC Current Gain IC= 14mA ; VCE= 10V 25 250 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.0 pF fT Current-Gain—Bandwidth Product IC= 14mA ; VCE= 10V; f= 0.5GHz 4.5 GHz NF Noise Figure IC= 2mA ; VCE= 10V; f= 0.5GHz 2.4 dB NF Noise Figure IC= 2mA ; VCE= 10V; f= 1GHz 3.0 dB Gpe Common-Emitter Amplifier Power Gain IC= 2mA ; VCE= 10V; f= 0.5GHz 15 dB Gpe Common-Emitter Amplifier Power Gain IC= 2mA ; VCE= 10V; f= 1GHz 10 dB |
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