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MMBR920L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MMBR920L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN RF Transistor MMBR920L DESCRIPTION · Low Noise NF= 2.4dB TYP. @ f= 500MHz · High Gain Gpe= 15dB TYP. @ f= 500MHz APPLICATIONS · Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amp- lification at frequencies to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation @TC= 25℃ 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Similar Description - MMBR920L |
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