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MMBR931L Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MMBR931L Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN RF Transistor MMBR931L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 5 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.01mA ; IE= 0 10 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 5V; IE= 0 50 nA hFE DC Current Gain IC= 0.25mA ; VCE= 1V 50 150 COB Output Capacitance IE= 0; VCB= 1V; f= 1MHz 0.5 pF GNF Power Gain at Optimum Figure IE= 0.25mA ; VCE= 1V; f= 1GHz 10 dB NF Noise Figure IE= 0.25mA ; VCE= 1V; f= 1GHz 4.3 dB |
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