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MMBR931L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MMBR931L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN RF Transistor MMBR931L DESCRIPTION · Low Noise Figure NF = 4.3 dB TYP. @VCE = 1 V, IE = 0.25 mA, f = 1 GHz APPLICATIONS · Designed primarily for use in low-power amplifiers to 1.0 GHz ,Ideal for pagers and other battery operated systems where power consumption is critical. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 10 V VCEO Collector-Emitter Voltage 5 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 5 mA PC Collector Power Dissipation @TC= 75℃ 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - MMBR931L |
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Similar Description - MMBR931L |
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