LM4879ITLSLASHNOPB datasheet(5/32 Pages) TI1

5 / 32 page

LM4879, LM4879MMBD, LM4879SDBD

www.ti.com

SNAS142G – SEPTEMBER 2001 – REVISED MAY 2013

ELECTRICAL CHARACTERISTICS VDD = 5V

(1) (2)

The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.

LM4879

Units

Parameter

Test Conditions

(Limits)

Typ(3)

Limit(4)(5)

IDD

Quiescent Power Supply Current

VIN = 0V, 8Ω BTL

mA (max)

ISD

Shutdown Current

Vshutdown = GND

0.1

2.0

µA (max)

VOS

Output Offset Voltage

mV (max)

Output Power

THD+N = 1% (max); f = 1kHz

1.1

0.9

W (min)

THD+N

Total Harmonic Distortion+Noise

Po = 0.4Wrms; f = 1kHz

0.1

Vripple = 200mVsine p-p, CB = 1.0µF

68 (f = 1kHz)

PSRR

Power Supply Rejection Ratio

dB (min)

62 (f = 217Hz)

Input terminated with 10

Ω to ground

VSDIH

Shutdown High Input Voltage

1.4

V (min)

VSDIL

Shutdown Low Input Voltage

0.4

V (max)

TWU

Wake-up Time

CB = 1.0µF

110

ms (max)

A-Weighted; Measured across 8

Ω BTL

NOUT

Output Noise

µVRMS

Input terminated with 10

Ω to ground

(1)

All voltages are measured with respect to the ground pin, unless otherwise specified.

(2)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication

of device performance.

(3)

Typicals are measured at 25°C and represent the parametric norm.

(4)

Limits are specified to TI's AOQL (Average Outgoing Quality Level).

(5)

For DSBGA only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a

maximum of 2µA.

ELECTRICAL CHARACTERISTICS VDD = 3.0V

(1) (2)

The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.

LM4879

Units

Parameter

Test Conditions

(Limits)

Typ(3)

Limit(4)(5)

IDD

Quiescent Power Supply Current

VIN = 0V, 8Ω BTL

4.5

mA (max)

ISD

Shutdown Current

Vshutdown = GND

0.1

2.0

µA (max)

VOS

Output Offset Voltage

mV (max)

Output Power

THD+N = 1% (max); f = 1kHz

350

320

THD+N

Total Harmonic Distortion+Noise

Po = 0.15Wrms; f = 1kHz

0.1

Vripple = 200mVsine p-p, CB = 1.0µF

68 (f = 1kHz)

PSRR

Power Supply Rejection Ratio

dB (min)

62 (f = 217Hz)

Input terminated with 10

Ω to ground

VSDIH

Shutdown High Input Voltage

1.4

V (min)

VSDIL

Shutdown Low Input Voltage

0.4

V (max)

TWU

Wake-up Time

CB = 1.0µF

110

ms (max)

A-Weighted; Measured across 8

Ω

NOUT

Output Noise

BTL

µVRMS

Input terminated with 10

Ω to ground

(1)

All voltages are measured with respect to the ground pin, unless otherwise specified.

(2)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication

of device performance.

(3)

Typicals are measured at 25°C and represent the parametric norm.

(4)

Limits are specified to TI's AOQL (Average Outgoing Quality Level).

(5)

For DSBGA only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a

maximum of 2µA.

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