LMH6715QML

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SNOSAQ3B – NOVEMBER 2010 – REVISED MAY 2013

LMH6715QML Dual Wideband Video Op Amp

Check for Samples: LMH6715QML

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FEATURES

DESCRIPTION

The LMH6715 combines Texas Instrument's VIP10™

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•

Available with Radiation Ensured 300 krad(Si)

high speed complementary bipolar process with

Texas Instrument's current feedback topology to

Specified.

produce a very high speed dual op amp. The

•

Very Low Diff. Gain, Phase: 0.02%, 0.02°

LMH6715 provides 400MHz small signal bandwidth at

a gain of +2V/V and 1300V/

μs slew rate while

•

consuming only 5.8mA per amplifier from ±5V

supplies.

•

0.1dB Gain Flatness to 100MHz

The LMH6715 offers exceptional video performance

•

Low Power: 5.8mA/Channel

with its 0.02% and 0.02° differential gain and phase

•

−70dB Channel-to-Channel Crosstalk (10MHz)

errors for NTSC and PAL video signals while driving

up to four back terminated 75

Ω loads. The LMH6715

•

Fast Slew Rate: 1300V/

μs

also offers a flat gain response of 0.1dB to 100MHz

•

Unity Gain Stable

and very low channel-to-channel crosstalk of

−70dB

•

Improved Replacement for CLC412

at 10MHz. Additionally, each amplifier can deliver

70mA of output current. This level of performance

APPLICATIONS

makes the LMH6715 an ideal dual op amp for high

density, broadcast quality video systems.

•

HDTV, NTSC & PAL Video Systems

The LMH6715's two very well matched amplifiers

•

Video Switching and Distribution

support a number of applications such as differential

•

IQ Amplifiers

line drivers and receivers. In addition, the LMH6715

•

Wideband Active Filters

is

well

suited

for

Sallen

Key

active

filters

in

applications such as anti-aliasing filters for high

•

Cable Drivers

speed A/D converters. Its low power requirement, low

•

DC Coupled Single-to-Differential Conversions

noise and distortion allow the LMH6715 to serve

portable RF applications such as IQ channels.

Connection Diagram

Top View

Figure 1. 8 Lead CDIP Package

See Package Number NAB0008A

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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VIP10 is a trademark of Texas Instruments.

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All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2010–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.