MCP1726-0802ESLASHMF datasheet(5/32 Pages) MICROCHIP

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 2005-2014 Microchip Technology Inc.

DS20001936D-page 5

MCP1726

Power Good Characteristics

Input Voltage Operating Range

for Valid PWRGD

VPWRGD_VIN

1.0

—

6.0

TA = +25°C

1.2

—

6.0

TA = -40°C to +125°C

ISINK = 100 µA

PWRGD Threshold Voltage

(Referenced to VOUT)

PWRGD_THF

%VOUT < 2.5V, Falling Edge

%VOUT > 2.5V, Falling Edge

PWRGD_THR

%VOUT < 2.5V, Rising Edge

%VOUT > 2.5V, Rising Edge

PWRGD Output Voltage Low

VPWRGD_L

—0.2

0.4

VIPWRGD SINK =1.2 mA

PWRGD Leakage

PWRGD_LK

—0.1

—

µA

VPWRGD =VIN =6.0V

PWRGD Time Delay

TPG

—

200

—

µs

CDELAY =OPEN

CDELAY =0.01µF

—

300

—

CDELAY =0.1 µF

Detect Threshold to PWRGD

Active Time Delay

TVDET-PWRGD

—

170

—

µs

Shutdown Input

Logic-High Input

VSHDN-HIGH

——

%VIN

VIN = 2.3V to 6.0V

Logic-Low Input

VSHDN-LOW

——

%VIN

VIN = 2.3V to 6.0V

SHDN Input Leakage Current

SHDNILK

-0.1

±0.001

+0.1

µA

VIN = 6V, SHDN =VIN,

SHDN =GND

AC Performance

Output Delay from SHDN

TOR

100

µs

SHDN = GND to VIN

VOUT = GND to 95% VR

Output Noise

—2.0

—

µV/

Hz IOUT =200 mA, f = 1kHz,

COUT = 1 µF (X7R Ceramic),

VOUT =2.5V

Power Supply Ripple Rejection

Ratio

PSRR

—

f = 100 Hz, COUT =10 µF,

IOUT =100 mA,

VINAC =30 mV pk-pk,

CIN =0 µF

Thermal Shutdown Temperature

TSD

—

150

—

°C

IOUT =100 µA,

VOUT =1.8V, VIN =2.8V

Thermal Shutdown Hysteresis

TSD

—10

—

°C

IOUT =100 µA,

VOUT =1.8V, VIN =2.8V

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications:

Unless otherwise noted, VIN =(VR + 0.5V) or 2.3V, whichever is greater, IOUT =1 mA,

CIN =COUT = 4.7 µF (X7R Ceramic), TA =+25°C. Boldface type applies for junction temperatures, TJ (Note 7), of -40°C to +125°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note

The minimum VIN must meet two conditions: VIN  2.3V and VIN VR +2.5% VDROPOUT.

VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output

voltage for the adjustable cases. VR =VADJ x((R1/R2) + 1). See Figure 4-1.

TCVOUT =(VOUT-HIGH –VOUT-LOW)x 10

6/(VR x Temperature). VOUT-HIGH is the highest voltage measured over the

temperature range. VOUT-LOW is the lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value that was measured with an input voltage of VIN =VR +0.5V.

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air. (i.e., TA, TJ, JA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 125°C can impact device reliability.

The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the

ambient temperature is not significant.

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