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2SB821 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB821 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB821 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA ; IE= 0 -50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 -40 V V(BR)EBO Emitter- Base Breakdown Voltage IE= 50uA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA -0.5 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -0.5 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.5 μ A hFE-1 DC Current Gain IC= -10mA ; VCE= -6V 120 560 fT Current-Gain—Bandwidth Product IC= -10mA ; VCE= -6V 100 MHz hFE-2 Classifications Q R S 120-270 180-390 270-560 |
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