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2SB821 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB821 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB821 DESCRIPTION · High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) · Good Linearity of hFE · Low Saturation Voltage APPLICATIONS · Designed for use in audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -300 mA PC Collector Power Dissipation @ TC=25℃ 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ |
Similar Part No. - 2SB821 |
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Similar Description - 2SB821 |
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