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SFT1202 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # SFT1202
Description  isc Silicon NPN Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SFT1202 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  SFT1202 Datasheet HTML 1Page - Inchange Semiconductor Company Limited SFT1202 Datasheet HTML 2Page - Inchange Semiconductor Company Limited SFT1202 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
SFT1202
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=10uA,IC=0
7
V
V (BR)CEO)
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
150
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC=10uA ,IE=0
180
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 100mA
0.165
V
IC= 0.5A; IB= 50mA
0.1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -1A; IB= 100mA
1.2
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
1
uA
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
1
uA
hFE
DC Current Gain
IC= 100mA; VCE= 5V
200
560
fT
Current-Gain—Bandwidth Product
IC= 300mA ;VCE= 10V
140
MHZ
COB
Output Capacitance
VCB=10V;f=1.0MHz
12
pF
Switching Times; Resistive Load
ton
Tur-on Time
IC= 10A; VCC= 75V;
IB= -0.5A
50
ns
ts
Storage Time
1.46
us
tf
Fall Time
70
ns



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