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SFT1202 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SFT1202 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor SFT1202 DESCRIPTION · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) · Fast -Switching speed · High allowable power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · DC/DC converter · Relay dirvers · Lamp dirvers · Motor dirvers，inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current 0.4 A PC Collector Power Dissipation Ta=25℃ 1 W Total Power Dissipation @ TC=25℃ 15 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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