DMN2011UFDF datasheet(2/7 Pages) DIODES

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DMN2011UFDF

Datasheet number: DS37734 Rev. 1 - 2

2 of 7

www.diodes.com

June 2016

DMN2011UFDF

Maximum Ratings (@T

A = +25°

C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

11.7

9.3

t<10s

TA = +25°C

TA = +70°C

14.2

11.4

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

Maximum Body Diode Continuous Current

2.5

Avalanche Current (Notes 7) L = 0.1mH

IAS

Avalanche Energy (Notes 7) L = 0.1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.73

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

175

°C/W

t<10s

128

Total Power Dissipation (Note 6)

TA = +25°C

2.1

TA = +70°C

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RJC

9.3

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@T

A = +25°

C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

A

VDS = 16V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

A

VGS = ±10V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.4

—

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

6.5

9.5

Ω

VGS = 4.5V, ID = 7A

7.5

VGS = 2.5V, ID = 7A

VGS = 1.8V, ID = 5A

VGS = 1.5V, ID = 3A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 8.5A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2248

—

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

295

—

Reverse Transfer Capacitance 4

Crss

—

265

—

Gate Resistance

—

1.5

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

VDS = 10V, ID = 8.5A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

Qgs

—

3.5

—

Gate-Drain Charge

Qgd

—

5.1

—

Turn-On Delay Time

tD(ON)

—

3.6

—

VDS = 10V, ID = 8.5A

VGS = 4.5V, Rg = 1.8Ω

Turn-On Rise Time

—

2.6

—

Turn-Off Delay Time

tD(OFF)

—

21.6

—

Turn-Off Fall Time

—

13.5

—

Reverse Recovery Time

TRR

—

12.8

—

IF = 8.5A, di/dt = 210A/μs

Reverse Recovery Charge

QRR

—

6.9

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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