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DMN2011UFDF Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN2011UFDF
Description  20V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2011UFDF Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN2011UFDF
Datasheet number: DS37734 Rev. 1 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMN2011UFDF
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
V
= .5V
I = 5A
GS
D
2
V
=
V
I = 3A
GS
D
1.8
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
f = 1MHz
Ciss
Coss
Crss
Q
(nC)
g, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
V
= 10V
I =
A
DS
D
8.5
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
R
Limited
DS(ON)
DC
P
= 10s
W
P = 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
T
= 150°C
T = 25°C
J(MAX)
A
V
= 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = -55°C
A
T = 85°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (
OC)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
I = 1mA
D
I = 250µA
D
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(t
h
)



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