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NCP391FCCADT2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP391FCCADT2G Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 14 page  NCP391 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS − NCP391FCALT2G (Min/Max limits values (−40 °C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C, unless otherwise noted.) Characteristic Symbol Conditions Min Typ Max Unit Input Voltage Range Vin − 1.2 − 28 V Undervoltage Lockout Threshold (Note 4) NCP391FCAL UVLO Vin falls below UVLO threshold from 5 V to 2.7 V 2.8 2.95 3.1 V Undervoltage Lockout Hysteresis UVLOhyst Vin rises above UVLO + UVLOhyst 30 60 90 mV Overvoltage Lockout Threshold (Note 4) NCP391FCAL OVLO Vin rises above OVLO threshold 7.16 7.4 7.65 V Overvoltage Lockout Hysteresis NCP391FCAL OVLOhyst Vin falls below OVLO + OVLOhyst 50 100 150 mV Vin versus Vout Resistance RDS(on) Vin = 5.0 V, EN = GND, Load connected to Vout − 120 200 m W Supply Quiescent Current Idd No load. EN = 5.0 V − 70 150 mA No load. EN = Gnd − 90 170 mA UVLO Supply Current Idduvlo VIN = 2.7 V − 60 − mA MOSFET Leakage Ivdss VIN = 28 V − 10 500 nA FLAG Output Low Voltage Volflag 1.2 V < VIN < UVLO Sink 50 mA on/FLAG pin − 20 400 mV VIN > OVLO Sink 1.0 mA on FLAG pin − − 400 mV FLAG Leakage Current FLAGleak FLAG level = 5.0 V − 1.0 − nA EN Voltage High Vih − 1.2 − − V EN Voltage Low Vol − − − 0.4 V EN Leakage Current ENleak EN = 5.0 V or GND − 1.0 − nA Thermal Shutdown Temperature tSD − − 150 − °C Thermal Shutdown Hysteresis tSDhyst − − 15 − °C TIMINGS Startup Delay ton From Vin > UVLO to Vout = 0.3 V (See Figures 3 & 7) 6.0 10 14 ms FLAG Going Up Delay tstart From Vout = 0.3 V to FLAG = 1.2 V (See Figures 3 & 9) 6.0 10 14 ms Output Turn Off Time toff From Vin > OVLO to Vout < = 0.3 V (See Figures 4 & 8) Vin increasing from 5.0 V to 8.0 V at 3.0 V/ ms Rload connected on Vout − 1.5 5.0 ms Alert Delay tstop From Vin > OVLO to FLAG < = 0.4 V (See Figures 4 & 10) Vin increasing from 5.0 V to 8.0 V at 3.0 V/ ms Rload connected on Vout − 1.0 − ms Disable Time tdis From EN > = 1.2 V to Vout < 0.3 V Rload = 5.0 W (See Figures 5 & 12) − 1.0 5.0 ms NOTE: Electrical parameters are guaranteed by correlation across the full range of temperature. 4. Additional UVLO and OVLO thresholds ranging from UVLO and from OVLO can be manufactured. Contact your ON Semiconductor representative for availability. |
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