SQJ486EP datasheet(5/13 Pages) VISHAY

5 / 13 page

SQJ202EP

www.vishay.com

Vishay Siliconix

S15-2474-Rev. A, 19-Oct-15

Document Number: 62926

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Safe Operating Area

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 25 °C

J = 150 °C

- 1.3

- 0.9

- 0.5

- 0.1

0.3

0.7

- 50

- 25

100

125

150

175

J - Temperature (°C)

D = 250 μA

D = 5 mA

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

175

J - Junction Temperature (°C)

D = 15 A

GS = 4.5 V

GS = 10 V

0.00

0.01

0.02

0.03

0.04

0.05

GS - Gate-to-Source Voltage (V)

J = 150 °C

J = 25 °C

- 50

- 25

100

125

150

175

J - Junction Temperature (°C)

D = 1 mA

0.01

0.1

100

0.01

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)*

1 ms

DM Limited

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

100 ms, 1 s,

10 s, DC

D Limited

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