SQJ486EP datasheet(2/13 Pages) VISHAY

2 / 13 page

SQJ202EP

www.vishay.com

Vishay Siliconix

S15-2474-Rev. A, 19-Oct-15

Document Number: 62926

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.5

VDS = VGS, ID = 250 μA

N-Ch 2

1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 12 V

N-Ch 1

μA

VGS = 0 V

VDS = 12 V

N-Ch 2

VGS = 0 V

VDS = 12 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 12 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 12 V, TJ = 175 °C

N-Ch 1

500

VGS = 0 V

VDS = 12 V, TJ = 175 °C

N-Ch 2

500

On-State Drain Current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

N-Ch 1

VGS = 10 V

VDS

≥ 5 V

N-Ch 2

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 15 A

N-Ch 1

0.0052

0.0065

VGS = 10 V

ID = 20 A

N-Ch 2

0.0025

0.0033

VGS = 10 V

ID = 15 A, TJ = 125 °C

N-Ch 1

0.0075

VGS = 10 V

ID = 20 A, TJ = 125 °C

N-Ch 2

0.0031

VGS = 10 V

ID = 15 A, TJ = 175 °C

N-Ch 1

0.0085

VGS = 10 V

ID = 20 A, TJ = 175 °C

N-Ch 2

0.0038

VGS = 4.5 V

ID = 13 A

N-Ch 1

0.0075

0.0093

VGS = 4.5 V

ID = 18 A

N-Ch 2

0.0034

0.0045

Forward Transconductance b

gfs

VDS = 10 V, ID = 15 A

N-Ch 1

VDS = 10 V, ID = 20 A

N-Ch 2

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 1

777

975

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 2

2018

2525

Output Capacitance

Coss

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 1

539

675

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 2

1313

1645

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 1

270

340

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 2

683

855

Total Gate Charge c

VGS = 10 V

VDS = 6 V, ID = 20 A

N-Ch 1

14.5

VGS = 10 V

VDS = 6 V, ID = 60 A

N-Ch 2

35.9

Gate-Source Charge c

Qgs

VGS = 10 V

VDS = 6 V, ID = 20 A

N-Ch 1

1.7

VGS = 10 V

VDS = 6 V, ID = 60 A

N-Ch 2

4.1

Gate-Drain Charge c

Qgd

VGS = 10 V

VDS = 6 V, ID = 20 A

N-Ch 1

2.1

VGS = 10 V

VDS = 6 V, ID = 60 A

N-Ch 2

4.3

Gate Resistance

f = 1 MHz

N-Ch 1

1.3

2.6

N-Ch 2

0.5

1.1

1.7

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