MSN06M2 datasheet(1/6 Pages) MORESEMI

Part #	MSN06M2

Description	60V(D-S) N-Channel Enhancement Mode Power MOS FET

PDF	6 Pages

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Manufacturer	MORESEMI [MORE Semiconductor Company Limited]

Direct Link	http://www.moresemi.com/

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1 / 6 page

MSN06M2

General Features

● VDS = 60V,ID = 0.115A

RDS(ON) < 3Ω @ VGS=5V

RDS(ON) < 2Ω @ VGS=10V

● Lead free product is acquired

● Surface mount package

Application

●Direct logic-level interface: TTL/CMOS

●Drivers: relays, solenoids,lamps, hammers,display,

memories, transistors, etc.

●Battery operated systems

●Solid-state relays

Schematic diagram

Marking and pin assignment

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN06M2

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

ID

0.115

A

Drain Current-Continuous@ Current-Pulsed

(Note 1)

IDM

0.8

A

Maximum Power Dissipation

PD

0.2

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

625

/W

℃

60V(D-S) N-Channel Enhancement Mode Power MOS FET

Lead Free

PIN Configuration

MORE Semiconductor Company Limited

http://www.moresemi.com

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