Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1

1.7

2.5

V

-

1.3

3

Ω

Drain-Source On-State Resistance

-

1.1

2

Ω

Forward Transconductance

0.08

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

20

50

PF

Output Capacitance

-

10

20

PF

Reverse Transfer Capacitance

F=1.0MHz

-

3.6

5

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

10

-

nS

Turn-on Rise Time

-

50

-

nS

Turn-Off Delay Time

-

17

-

nS

Turn-Off Fall Time

-

10

-

nS

Total Gate Charge

-

1.7

3

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

0.115

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

60

68

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

MORE Semiconductor Company Limited

http://www.moresemi.com

2/6

MSN06M2