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CJCD2007 Datasheet(PDF) 1 Page - ZP Semiconductor |
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CJCD2007 Datasheet(HTML) 1 Page - ZP Semiconductor |
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1 / 2 page  DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2007 Dual N-Channel MOSFET DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ *Repetitive rating：Pluse width limited by junction temperature. DFNWB2×3-6L-C 1 of 2 sales@zpsemi.com www.zpsemi.com CJCD2007 |
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