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CJCD2007 Datasheet(PDF) 2 Page - ZP Semiconductor

Part # CJCD2007
Description  Plastic-Encapsulate MOSFETS
PDF  2 Pages
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Manufacturer  ZPSEMI [ZP Semiconductor]
Direct Link  http://zpsemi.com/
Logo ZPSEMI - ZP Semiconductor

CJCD2007 Datasheet(HTML) 2 Page - ZP Semiconductor

  CJCD2007 Datasheet HTML 1Page - ZP Semiconductor CJCD2007 Datasheet HTML 2Page - ZP Semiconductor  
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ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±4.5V, VDS = 0V
±1
µA
VGS =±8V, VDS = 0V
±10
µA
Gate threshold voltage (note 1)
VGS(th)
VDS =VGS, ID =250µA
0.4
1
V
Drain-source on-resistance (note 1)
RDS(on)
VGS =10V, ID =7A
20
mΩ
VGS =4.5V, ID =6.6A
22
mΩ
VGS =3.8V, ID =6A
24
mΩ
VGS =2.5V, ID =5.5A
26
mΩ
VGS =1.8V, ID =5A
35
mΩ
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
9
S
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
1
V
DYNAMIC PARAMETERS
(note 2)
Input Capacitance
Ciss
VDS =10V,VGS =0V,f =1MHz
1150
pF
Output Capacitance
Coss
185
pF
Reverse Transfer Capacitance
Crss
145
pF
Total gate charge
Qg
VDS =10V,VGS =4.5V,ID =7A
15
nC
Gate-source charge
Qgs
0.8
nC
Gate-drain charge
Qgd
3.2
nC
SWITCHING PARAMETERS
(note 2)
Turn-on delay time
td(on)
VGS=5V,VDD=10V,
RL=1.35Ω,RGEN=3Ω
6
ns
Turn-on rise time
tr
13
ns
Turn-off delay time
td(off)
52
ns
Turn-off fall time
tf
16
ns
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
2 of 2
sales@zpsemi.com
www.zpsemi.com
CJCD2007



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