BFP650F_13 datasheet(3/7 Pages) INFINEON

3 / 7 page

2013-09-06

BFP650F

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 80 mA, VCE = 3 V, f = 1 GHz

GHz

Collector-base capacitance

VCB = 3 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

0.26

Collector emitter capacitance

VCE = 3 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

0.45

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

1.3

Minimum noise figure

IC = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt

IC = 10 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt

NFmin

0.8

1.9

Power gain, maximum available1)

IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,

f = 1.8 GHz

f = 6 GHz

Gma

21.5

Transducer gain

IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω,

f = 1.8 GHz

f = 6 GHz

|S21e|2

17.5

7.5

Third order intercept point at output2)

VCE = 3 V, IC = 80 mA, f = 1.8 GHz,

ZS = ZL = 50 Ω

IP3

dBm

1dB compression point at output

IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω,

f = 1.8 GHz

P-1dB

17.5

1Gma = |S21e / S12e| (k-(k²-1)1/2)

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

Ω from 0.1 MHz to 6 GHz

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