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BFP650F Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BFP650F
Description  Linear Low Noise SiGe:C Bipolar RF Transistor
PDF  7 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP650F Datasheet(HTML) 1 Page - Infineon Technologies AG

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2013-09-06
1
BFP650F
1
2
4
3
Linear Low Noise SiGe:C Bipolar RF Transistor
• For medium power amplifiers and driver stages
• Based on Infineon' s reliable high volume Silicon
Germanium technology
• High OIP3 and P-1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
Minimun noise figure NFmin = 0.8 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
1
3
4
2
Direction of Unreeling
Top View
XYs
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP650F
R5s
1=B
2=E
3=C
4=E
-
-
TSFP-4


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