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BFP650F Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFP650F Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 7 page ![]() 2013-09-06 1 BFP650F 1 2 4 3 Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available 1 3 4 2 Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP650F R5s 1=B 2=E 3=C 4=E - - TSFP-4 |
Similar Part No. - BFP650F_13 |
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Similar Description - BFP650F_13 |
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