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IPA60R250CP Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPA60R250CP Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 10 page ![]() IPA60R250CP Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1300 - pF Output capacitance C oss -65- Effective output capacitance, energy related 6) C o(er) -55- Effective output capacitance, time related 7) C o(tr) - 150 - Turn-on delay time t d(on) -40- ns Rise time t r -17- Turn-off delay time t d(off) - 110 - Fall time t f -12- Gate Charge Characteristics Gate to source charge Q gs -6 - nC Gate to drain charge Q gd -9 - Gate charge total Q g -26 35 Gate plateau voltage V plateau -5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=7.8 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 330 - ns Reverse recovery charge Q rr - 4.5 - µC Peak reverse recovery current I rrm -27- A 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 5) I SD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. V R=400 V, I F=I S, di F/dt =100 A/µs Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=7.8 A, R G=23.1 Ω V DD=400 V, I D=7.8 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Rev.2. 1 page 3 20 12-01-09 |
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