IPA60R250CP_12 datasheet(1/10 Pages) INFINEON

Part #	IPA60R250CP

Description	CoolMOS짰 Power Transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPA60R250CP

CoolMOS

® Power Transistor

Features

• Lowest figure-of-merit RONxQg

• Ultra low gate charge

6.6

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is designed for:

• Hard switching SMPS topologies

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

2)

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

3)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=5.2 A, V DD=50 V

345

mJ

Avalanche energy, repetitive t AR

3),4)

E AR

I D=5.2 A, V DD=50 V

Avalanche current, repetitive t AR

3),4)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M2.5 screws

50

Ncm

±30

33

-55 ... 150

0.52

5.2

50

±20

Value

12

8

40

V DS @ Tj,max

650

V

R DS(on),max@T j= 25°C

0.250

Ω

Q g,typ

26

nC

Product Summary

Type

Package

Marking

IPA60R250CP

PG-TO220FP

6R299P

Type

Package

Marking

IPA60R250CP

PG-TO220FP

6R250P

PG-TO220 FP

Rev.2.

1

page 1

20

12-01-09

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