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TMS28F010B Datasheet(PDF) 21 Page - Texas Instruments |
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TMS28F010B Datasheet(HTML) 21 Page - Texas Instruments |
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21 / 23 page ![]() TMS28F010B 131072 BY 8-BIT FLASH MEMORY SMJS824B – MAY 1995 – REVISED AUGUST 1997 21 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION Power Up and Standby Set-Up- Erase Command Erase Command Erasing Erase- Verify Command Erase Verification Standby / Power Down A0 – A16 E G W DQ0 – DQ7 5 V VCC 0 V VPPH VPP VPPL tc(W) tsu(A) tdis(G) th(D) th(WHD) tw(W) tsu(D) td(E) ta(E) tsu(VPPEL) th(WHD) Data In = 20h Data In = 20h Data In = A0h Valid Data-Out th(A) tsu(E) tr(VPP) tf(VPP) tdis(E) Hi-Z td(G) ten(G) tw(W) tsu(D) th(WHD) tw(W) tsu(D) th(E) tc(W) tc(R) th(E) th(E) tw(WH) tc(W)ER trec(W) tc(W) tsu(E) tsu(E) trec(R) Figure 8. Flash-Erase-Cycle Timing |
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