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IRFU3707ZPbF Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IRFU3707ZPbF Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 12 page  IRFR/U3707ZPbF 2 2016-5-31 Notes: Repetitive rating; pulse width limited by max. junction temperature starting TJ = 25°C, L = 0.58mH, RG = 25, IAS = 12A. Pulse width 400µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 7.5 9.5 m VGS = 10V, ID = 15A ––– 10 12.5 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V VDS = VGS, ID = 25µA VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ––– -5.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– -100 VGS = -20V gfs Forward Trans conductance 71 ––– ––– S VDS = 15V, ID = 12A Qg Total Gate Charge ––– 9.6 14 nC Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.6 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 0.90 ––– VGS = 4.5V Qgd Gate-to-Drain Charge ––– 3.5 ––– ID = 12A Qgodr Gate Charge Overdrive ––– 2.6 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.4 ––– Qoss Output Charge ––– 5.8 ––– nC VDS = 15V, VGS = 0V td(on) Turn-On Delay Time ––– 8.0 ––– ns VDD = 16V,VGS = 4.5V tr Rise Time ––– 11 ––– ID = 12A td(off) Turn-Off Delay Time ––– 12 ––– Clamped Inductive Load tf Fall Time ––– 3.3 ––– Ciss Input Capacitance ––– 1150 ––– pF VGS = 0V Coss Output Capacitance ––– 260 ––– VDS = 15V Crss Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz Avalanche Characteristics EAS Single Pulse Avalanche Energy 42 mJ IAR Avalanche Current 12 A EAR Repetitive Avalanche Energy 5.0 mJ Parameter Max. Units Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 56 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 220 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C,IS = 12A,VGS = 0V trr Reverse Recovery Time ––– 25 38 ns TJ = 25°C ,IF = 12A, VDS = 15V Qrr Reverse Recovery Charge ––– 17 26 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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