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STM32F318C8 Datasheet(PDF) 80 Page - STMicroelectronics |
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STM32F318C8 Datasheet(HTML) 80 Page - STMicroelectronics |
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80 / 125 page ![]() Electrical characteristics STM32F318C8 STM32F318K8 80/125 DocID026294 Rev 5 All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 18 and Figure 19 for standard I/Os. Figure 18. TC and TTa I/O input characteristics Figure 19. Five volt tolerant (FT and FTf) I/O input characteristics RPD Weak pull-down equivalent resistor(5) VIN VDD 25 40 55 k CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation 2. Tested in production. 3. Leakage could be higher than the maximum value. if negative current is injected on adjacent pins. Refer to Table 47: I/O current injection susceptibility . 4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order). Table 48. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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