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2SB823 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB823 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-2 DC Current Gain IC= -3A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 20 MHz |
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