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2SB823 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB823
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB823 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SB823
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
V(BR)CEO = -100V(Min)
·
Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -6A
·
Wide Area of Safe Operation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose amplifer and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
CBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-10
A
PC
Total Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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