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STM32L475RC Datasheet(PDF) 85 Page - STMicroelectronics |
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STM32L475RC Datasheet(HTML) 85 Page - STMicroelectronics |
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85 / 193 page ![]() DocID027692 Rev 2 85/193 STM32L475xx Electrical characteristics 181 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 23 are derived from tests performed under the ambient temperature condition summarized in Table 22. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 24 are derived from tests performed under the ambient temperature conditions summarized in Table 22: General operating conditions. 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.3: Thermal characteristics). 5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.3: Thermal characteristics). Table 23. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ µs/V VDDA fall time rate 10 ∞ tVDDUSB VDDUSB rise time rate - 0 ∞ µs/V VDDUSB fall time rate 10 ∞ Table 24. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 V Falling edge 2.15 2.20 2.25 |
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